HL8342MG Datasheet, PDF (1/4 Pages) Opnext. Inc. – GaAlAs Laser Diode

HL8342MG
GaAlAs Laser Diode
ODE-208-069A (Z)
Rev.1
May 24, 2007
Description
The HL8342MG is 0.85 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a
light source for sensor applications and various other types of optical equipment.
Features
• Infrared light output: λp = 852 nm Typ
• Optical output power: 50 mW (CW)
• Low operating current: 75 mA Typ
• Low operating voltage: 1.9 V Typ
• Built-in monitor photodiode
• Single longitudinal mode
Package Type
• HL8342MG: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
PO
VR(LD)
VR(PD)
Topr
Tstg
Ratings
50
2
30
–10 to +60
–40 to +85
(T_C = 25°C)
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
—
20
Slope efficiency
ηs
0.7
0.9
Operating current
IOP
—
75
Operating voltage
VOP
—
1.9
Beam divergence
θ//
6
9
parallel to the junction
Beam divergence
θ⊥
18
22
perpendicular to the junction
Lasing wavelength
λp
848
852
Monitor current
IS
—
0.25
Max
40
—
100
2.0
12
26
856
—
Unit
mA
mW/mA
mA
V
°
(T_C = 25°C)
Test Conditions
—
30 (mW)/(I(40mW) – I(10mW))
PO = 50 mW
PO = 50 mW
PO = 50 mW, FWHM
°
PO = 50 mW, FWHM
nm PO = 50 mW
mA
PO = 50 mW, VR(PD) = 5 V
Rev.1 May 24, 2007 page 1 of 4