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HL8338MG Datasheet, PDF (1/4 Pages) Opnext. Inc. – GaAlAs Laser Diode | |||
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HL8338MG
GaAlAs Laser Diode
ODE-208-066A (Z)
Rev.1
May 24, 2007
Description
The HL8338MG is 0.83 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a
light source for sensor applications and various other types of optical equipment.
Features
⢠Infrared light output: λp = 830 nm Typ
⢠Optical output power: 50 mW (CW)
⢠Low operating current: 75 mA Typ
⢠Low operating voltage: 1.9 V Typ
⢠Built-in monitor photodiode
⢠Single longitudinal mode
Package Type
⢠HL8338MG: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
PO
VR(LD)
VR(PD)
Topr
Tstg
Ratings
50
2
30
â10 to +60
â40 to +85
(TC = 25°C)
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
â
20
Slope efficiency
ηs
0.7
0.9
Operating current
IOP
â
75
Operating voltage
VOP
â
1.9
Beam divergence
θ//
6
9
parallel to the junction
Beam divergence
θâ¥
18
22
perpendicular to the junction
Lasing wavelength
λp
820
830
Monitor current
IS
â
0.25
Max
40
â
100
2.4
12
26
840
â
Unit
mA
mW/mA
mA
V
°
(TC = 25°C)
Test Conditions
â
30 (mW)/(I(40mW) â I(10mW))
PO = 50 mW
PO = 50 mW
PO = 50 mW, FWHM
°
PO = 50 mW, FWHM
nm PO = 50 mW
mA
PO = 50 mW, VR(PD) = 5 V
Rev.1 May 24, 2007 page 1 of 4
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