HL8335MG Datasheet, PDF (1/4 Pages) Opnext. Inc. – GaAIAs Laser Diode

HL8335MG
GaAIAs Laser Diode
ODE-208-058B (Z)
Rev.2
Jun. 13, 2006
Description
The HL8335MG is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure.
It is suitable as a light source for various types of optical equipment.
Features
• Infrared light output: λp = 840 to 860 nm
• High Power: standard continuous operation at
40mW (CW), pulsed operation at 50mW
• Built-in monitor photodiode
• Single longitudinal mode
Package Type
• HL8335MG: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power
PO(pulse)
LD reverse voltage
VR(LD)
PD reverse voltage
VR(PD)
Operating temperature
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%
Ratings
40
50 *
2
30
–10 to +60
–40 to +85
(T_C = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
—
40
Slope efficiency
ηs
0.4
0.5
Operating current
IOP
—
120
Beam divergence
θ//
7
10
parallel to the junction
Beam divergence
θ⊥
18
22
perpendicular to the junction
Lasing wavelength
λp
840
850
Monitor current
IS
0.08
0.2
Max
70
0.9
160
14
32
860
0.40
Unit
mA
mW/mA
mA
°
(T_C = 25°C)
Test Conditions
—
24(mW) / (I(32mW) – I(8mW))
PO = 40 mW
PO = 40 mW, FWHM
°
PO = 40 mW, FWHM
nm PO = 40 mW
mA
PO = 40 mW, VR(PD) = 5 V
Rev.2 Jun. 13, 2006 page 1 of 4