HL8334MG Datasheet, PDF (1/4 Pages) Opnext. Inc. – GaAlAs Laser Diode

HL8334MG
GaAlAs Laser Diode
ODE-208-057B (Z)
Rev.2
Jun. 13, 2006
Description
The HL8334MG is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. It is
suitable as a light source for optical disk memories, card readers and various other types of optical equipment.
Features
• Infrared light output: λp = 820 to 840 nm
• High power:
standard continuous operation at 40 mW (CW),
pulsed operation at 50 mW
• Built-in monitor photodiode
• Single longitudinal mode
Package Type
• HL8334MG: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power
LD reverse voltage
PO(pulse)
VR(LD)
PD reverse voltage
Operating temperature
VR(PD)
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width = 1 µs, duty = 50%
Ratings
40
50 *
2
30
–10 to +60
–40 to +85
(T_C = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
—
40
Slope efficiency
ηs
0.4
0.5
Operating current
IOP
—
120
Beam divergence
θ//
7
10
parallel to the junction
Beam divergence
θ⊥
18
22
perpendicular to the junction
Astigmatism
AS
—
5
Lasing wavelength
λp
820
830
Monitor current
IS
0.08
0.20
Max
70
0.9
160
14
32
—
840
0.40
Unit
mA
mW/mA
mA
°
(T_C = 25°C)
Test Conditions
—
24 (mW) / (I(32mW) – I(8mW))
PO = 40 mW
PO = 40 mW, FWHM
°
PO = 40 mW, FWHM
µm PO = 4 mW, NA = 0.4
nm PO = 40 mW
mA
PO = 40 mW, VR(PD) = 5 V
Rev.2 Jun. 13, 2006 page 1 of 4