HL8325G Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – GaAlAs Laser Diode

HL8325G
GaAlAs Laser Diode
ODE-208-048A (Z)
Rev.1
May 08, 2007
Description
The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its
internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light
source for optical disk memories, card readers and various other types of optical equipment.
Features
• Infrared light output: λp = 820 to 840 nm
• High power: standard continuous operation at
40 mW (CW), pulsed operation at 50 mW
• Built-in monitor photodiode
• Single longitudinal mode
Package Type
• HL8325G: G2
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power
Laser diode reverse voltage
PO(pulse)
VR(LD)
Photo diode reverse voltage
Operating temperature
VR(PD)
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width = 1 µs, duty = 50%
Ratings
40
50 *
2
30
–10 to +60
–40 to +85
(T_C = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
—
40
Slope efficiency
ηs
0.4
0.5
Beam divergence
θ//
7
10
parallel to the junction
Beam divergence
θ⊥
18
22
parpendicular to the junction
Asitgmatism
AS
—
5
Lasing wavelength
λp
820
830
Monitor current
IS
20
40
Max
70
0.9
14
32
—
840
130
Unit
mA
mW/mA
°
(T_C = 25°C)
Test Conditions
—
24 (mW) / (I(32mW) – I(8mW))
PO = 40 mW, FWHM
°
PO = 40 mW, FWHM
µm PO = 4 mW, NA = 0.4
nm PO = 40 mW
µA
PO = 4 mW, VR(PD) = 5 V
Rev.1 May 08, 2007 page 1 of 4