HL7852G Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – GaA1As Laser Diode

HL7852G
GaAlAs Laser Diode
ODE-208-063A (Z)
Rev.1
Dec. 04, 2006
Description
The HL7852G is a high-power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is
suitable as a light source for optical disk memories, levelers and various other types of optical equipment. Hermetic
sealing of the package assures high reliability.
Features
• Visible light output: λp = 785 nm Typ
• Small beam ellipticity: 9.5:23
• High output power: 50 mW (CW)
• Built-in monitor photodiode
Package Type
• HL7852G: G2
Internal Circuit
1
3
PD
LD
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power
LD reverse voltage
PO(pulse)
VR(LD)
PD reverse voltage
Operating temperature
VR(PD)
Topr
Storage temperature
Tstg
Note: Maximum 50% duty cycle, maximum 1 µs pulse width.
Ratings
50
60 *
2
30
–10 to +60
–40 to +85
2
(T_C = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
—
45
Slope efficiency
ηs
0.35
0.55
LD Operating current
IOP
—
135
LD Operating voltage
VOP
—
2.3
Lasing wavelength
λp
775
785
Beam divergence (parallel) θ//
8
9.5
Beam divergence
θ⊥
18
23
(perpendicular)
Monitor current
IS
25
45
Astigmatism
AS
—
5
Max
70
0.7
165
2.7
795
12
28
150
—
Unit
mA
mW/mA
mA
V
nm
°
°
(T_C = 25°C)
Test Conditions
40 (mW) / (I(45mW) – I(5mW))
PO = 50 mW
PO = 50 mW
PO = 50 mW
PO = 50 mW, FWHM
PO = 50 mW, FWHM
µA
PO = 5 mW, VR(PD) = 5 V
µm PO = 5 mW, NA = 0.4
Rev.1 Dec. 04, 2006 page 1 of 4