HL6750MG Datasheet, PDF (1/4 Pages) Opnext. Inc. – Visible High Power Laser Diode

HL6750MG
Visible High Power Laser Diode
ODE-208-021A (Z)
Rev.1
Dec. 21, 2006
Description
The HL6750MG is a 0.68 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is
suitable as a light source for various other types of optical equipment.
Features
• High output power : 50 mW (CW)
• Small package
: φ 5.6 mm
• Visible light output : λp = 685 nm Typ
• Single longitudinal mode
• Low operating current : 75 mA typ
• Low operating voltage : 2.3 V typ
Package Type
• HL6750MG: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
Item
Optical output power
Laser diode reverse voltage
Photo diode reverse voltage
Operating temperature
Storage temperature
Symbol
PO
VR(LD)
VR(PD)
Topr
Tstg
Ratings
55
2
30
–10 to +70
–40 to +85
(T_C = 25°C)
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
—
30
Operating voltage
VOP
—
2.3
Slope efficiency
ηs
0.8
1.1
Operating current
IOP
—
75
Beam divergence
θ//
7
9
parallel to the junction
Beam divergence
θ⊥
18
21
perpendicular to the junction
Lasing wavelength
λp
675
685
Monitor current
IS
0.08
0.15
Astigmatism
AS
—
1
Max
60
3.0
1.4
120
12
25
695
0.35
—
Unit
mA
V
mW/mA
mA
°
(T_C = 25°C)
Test Conditions
—
PO = 50 mW
30(mW) / (I(40mW) – I(10mW))
PO = 50 mW
PO = 50 mW
°
PO = 50 mW
nm PO = 50 mW
mA
PO = 50 mW, VR(PD) = 5 V
µm PO = 5 mW, NA = 0.55
Rev.1 Dec. 21, 2006 page 1 of 4