HL6740FG Datasheet, PDF (1/4 Pages) Opnext. Inc. – Dual Beam Visible Laser Diode

HL6740FG
Dual Beam Visible Laser Diode
ODE-208-024 (Z)
Rev.0
Feb. 24, 2006
Description
The HL6740FG is a 0.67 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is an array of
two individual beams on one chip. Therefore, it is suitable as a light source for a high-speed printer, such as PPC and
LBP, and so on.
Features
• Continuous operating output to each beam: 5 mW CW
• Visible light output: 675 nm Typ
• Difference of wavelength between 2 beams
: 3 nm Max
• Low threshold current: 35 mA Typ
Package Type
• HL6740FG: FG
Internal Circuit
14 3
LDB PD
LDA
2
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power
PO(pulse)
LD reverse voltage
VR(LD)
PD reverse voltage
VR(PD)
Operating temperature
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width ≤ 1 µs, duty ≤ 50%
Ratings
5
6*
2
30
–10 to +50
–40 to +85
(T_C = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
(T_C = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Threshold current
Ith
—
35
50
mA —
LD Operating current
IOP
LD Operating voltage
VOP
Slope efficiency
ηs
Beam divergence
θ//
parallel to the junction
—
—
75
mA PO = 5 mW
—
2.3
2.7
V
PO = 5 mW
0.2
0.4
0.6
mW/mA 3 (mW) / (I(4mW) – I(1mW))
6.5
8
11
°
PO = 5 mW
Beam divergence
θ⊥
perpendicular to the junction
20
30
36
°
PO = 5 mW
Lasing wavelength
λp
Difference of wavelength *² ∆λp
Monitor current
Is
665
675
680
nm PO = 5 mW
—
—
3.0
nm PO = 5 mW
1.0
—
4.0
mA
PO = 5 mW, VR(RD) = 5V
Notes: 1. The characteristics are specified under the condition of a single beam operation unless otherwise specified.
2. ∆λp is specified as absolute value of the difference between two beams operated every beam.
Rev.0 Feb. 24, 2006 page 1 of 4