HL6738MG Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Visible High Power Laser Diode

HL6738MG
Visible High Power Laser Diode
ODE-208-047 (Z)
Rev.0
Sept. 25, 2006
Description
The HL6738MG is a 0.68 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is
suitable as a light source for various other types of optical equipment.
Features
• High output power : 35 mW (CW)
• Visible light output : λp = 690 nm Typ
• Small package
: φ 5.6 mm
• Low astigmatism
: 6 µm Typ (P_O = 5 mW)
• Single longitudinal mode
Package Type
• HL6738MG: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power
Laser diode reverse voltage
PO(pulse)
VR(LD)
Photo diode reverse voltage
Operating temperature
VR(PD)
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width = 100 ns, duty = 50%
Ratings
35
50 *
2
30
–10 to +70
–40 to +85
(T_C = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
30
45
Operating voltage
VOP
2.1
2.5
Slope efficiency
ηs
0.5
0.7
Beam divergence
θ//
7
8.5
parallel to the junction
Beam divergence
θ⊥
17
19
parpendicular to the junction
Asitgmatism
AS
—
6
Lasing wavelength
λp
680
690
Monitor current
IS
0.02
0.1
Max
70
2.8
0.9
10.5
23
—
695
0.45
Unit
mA
V
mW/mA
°
(T_C = 25°C)
Test Conditions
—
PO = 30 mW
18(mW) / (I(24mW) – I(6mW))
PO = 30 mW
°
PO = 30 mW
µm PO = 5 mW, NA = 0.55
nm PO = 30 mW
mA
PO = 30 mW, VR(PD) = 5 V
Rev.0 Sept. 25, 2006 page 1 of 4