HL6724MG Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – The HL6724MG is a 0.67 um band AlGaInP laser diode with a multi-quantum well (MQW) structure

HL6724MG
AlGaInP Laser Diode
ODE-208-046 (Z)
Rev.0
Oct. 17, 2006
Description
The HL6724MG is a 0.67 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is suitable as a
light source for laser pointers and optical equipments for amusement.
Features
• Visible light output: 670 nm Typ
• Single longitudinal mode
• Optical output power: 5 mW CW
• Low operating current: 35 mA Typ
• Low operating voltage: 2.7 V Max
Package Type
• HL6724MG: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power
LD reverse voltage
PO(pulse)
VR(LD)
PD reverse voltage
Operating temperature
VR(PD)
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%
Ratings
5
6*
2
30
–10 to +50
–40 to +85
(T_C = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
—
25
LD operating current
IOP
—
35
LD operating voltage
VOP
Beam divergence
θ//
—
—
5
8
parallel to the junction
Beam divergence
θ⊥
22
30
parpendicular to the junction
Astigmatism
AS
—
5
Lasing wavelength
λp
660
670
Monitor current
IS
0.4
0.9
Max
35
50
2.7
11
40
—
680
2.0
(T_C = 25°C)
Unit
Test Conditions
mA —
mA PO = 5 mW
V
PO = 5 mW
°
PO = 5 mW, FWHM
°
PO = 5 mW, FWHM
µm PO = 5 mW, NA = 0.55
nm PO = 5 mW
mA
PO = 5 mW, VR(PD) = 5 V
Rev.0 Oct . 17, 2006 page 1 of 4