HL6714G Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – AlGaInP Laser Diode

HL6714G
AlGaInP Laser Diode
ODE-208-044 (Z)
Rev.0
Oct. 17, 2006
Description
The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is
suitable as a light source for laser beam printers, levelers and various other types of optical equipment. Hermetic
sealing of the package assures high reliability.
Features
• Visible light output at wavelengths up to 680 nm
• Single longitudinal mode
• High output power: 10 mW (CW)
• Built-in monitor photodiode
Package Type
• HL6714G: G2
Internal Circuit
1
3
PD
LD
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power
LD reverse voltage
PO(pulse)
VR(LD)
PD reverse voltage
Operating temperature
VR(PD)
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%
Ratings
10
12 *
2
30
–10 to +50
–40 to +85
2
(T_C = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
20
35
LD operating voltage
VOP
—
—
Slope efficiency
ηs
0.3
0.5
Beam divergence
θ//
5
8
parallel to the junction
Beam divergence
θ⊥
18
22
parpendicular to the junction
Astigmatism
AS
—
10
Lasing wavelength
λp
660
670
Monitor current
IS
0.3
0.8
Max
60
2.7
0.8
11
30
—
680
1.5
Unit
mA
V
mW/mA
°
(T_C = 25°C)
Test Conditions
—
PO = 10 mW
6 (mW) / (I(8mW) – I(2mW))
PO = 10 mW, FWHM
°
PO = 10 mW, FWHM
µm PO = 10 mW, NA = 0.55
nm PO = 10 mW
mA
PO = 10 mW, VR(PD) = 5 V
Rev.0 Oct. 17, 2006 page 1 of 4