HL6556MG Datasheet, PDF (1/3 Pages) Opnext. Inc. – AlGaInP Laser Diodes

HL6556MG
AlGaInP Laser Diodes
ODE-208-041 (Z)
Preliminary
Rev.0
Feb. 06, 2007
Description
The HL6556MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is
suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.
Features
• Visible light output : λp =658 nm Typ
• Single longitudinal mode
• Optical output power : 10 mW CW
• Low operating voltage : 2.8 V Max
• Built-in photodiode for monitoring laser output
• Small package
: φ 5.6 mm
Package Type
• HL6556: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
PO
VR(LD)
VR(PD)
Topr
Tstg
Ratings
12
2
30
–10 to +70
–40 to +85
(T_C = 25°C)
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
30
45
Operating current
IOP
—
60
Operating voltage
VOP
—
—
Beam divergence
θ//
parallel to the junction
7
8.5
Beam divergence
θ⊥
perpendicular to the junction
18
22
Astigmatism
AS
—
6
Lasing wavelength
λp
645
658
Monitor current
IS
0.03
0.07
Max
70
90
2.8
10.5
26
—
665
0.15
Unit
mA
mA
V
°
°
—
nm
mA
(T_C = 25°C)
Test Conditions
—
PO = 10 mW
PO = 10 mW
PO = 10 mW
PO = 10 mW
PO = 5 mW, NA = 0.55
PO = 10 mW
PO = 10 mW, VR(PD) = 5 V
Rev.0 Feb. 06, 2007 page 1 of 3