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HL6554MG Datasheet, PDF (1/4 Pages) Opnext. Inc. – AlGaInP Laser Diodes | |||
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HL6554MG
AlGaInP Laser Diodes
ODE-208-036C (Z)
Rev.3
May 09, 2007
Description
The HL6554MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is
suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.
Features
⢠Visible light output : λp =658 nm Typ
⢠Single longitudinal mode
⢠Optical output power : 10 mW CW
⢠Low operating voltage : 2.8 V Max
⢠Built-in photodiode for monitoring laser output
⢠Small package
: Ï 5.6 mm
Package Type
⢠HL6554: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
PO
VR(LD)
VR(PD)
Topr
Tstg
Ratings
12
2
30
â10 to +70
â40 to +85
(TC = 25°C)
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
30
45
Operating current
IOP
â
60
Operating voltage
VOP
â
â
Beam divergence
θ//
parallel to the junction
7
8.5
Beam divergence
θâ¥
perpendicular to the junction
18
22
Astigmatism
AS
â
6
Lasing wavelength
λp
645
658
Monitor current
IS
0.03
0.07
Max
70
90
2.8
10.5
26
â
665
0.15
Unit
mA
mA
V
°
°
â
nm
mA
(TC = 25°C)
Test Conditions
â
PO = 10 mW
PO = 10 mW
PO = 10 mW
PO = 10 mW
PO = 5 mW, NA = 0.55
PO = 10 mW
PO = 10 mW, VR(PD) = 5 V
Rev.3 May 09, 2007 page 1 of 4
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