HL6512MG Datasheet, PDF (1/4 Pages) Opnext. Inc. – Visible High Power Laser Diode

HL6512MG
Visible High Power Laser Diode
ODE-208-042A (Z)
Rev.1
Oct. 20, 2006
Description
The HL6512MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. Its beam
divergence (parallel to the junction) has a small variation to the optical output power. It is suitable as light sources for
laser scanners and optical equipment for measurement.
Features
• High output power and Wide operating temperature:
70 mW (pulse), PW = 100ns, duty = 50%,
(Topr = 70°C)
• Small package
: φ 5.6 mm
• Visible light output : λp = 658 nm Typ
• The beam divergence (parallel to the junction) has a
small variation to the output power.
• Single longitudinal mode
Package Type
• HL6512MG: MG
Internal Circuit
1
3
LD
2
Absolute Maximum Ratings
(T_C = 25°C)
Item
Symbol
Ratings
Unit
Optical output power
Pulse optical output power
Laser diode reverse voltage
Operating temperature
PO
PO_(pulse)
VR(LD)
Topr
50
mW
70 *¹
mW
2
V
−10 to +70 *²
°C
Storage temperature
Tstg
−40 to +85
°C
Notes: 1. Pulse condition : Pulse width = 100 ns, duty = 50%
2. The value of −10 to +70°C is effective under pulse operation. The value under CW operation is −10 to +60°C.
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
30
45
Operating current
Iop
—
115
Operating voltage
VOP
2.1
2.6
Beam divergence
θ//
7
8.5
parallel to the junction
Beam divergence
θ⊥
18
21
perpendicular to the junction
Astigmatism
AS
—
5
Lasing wavelength
λp
655
658
(T_C = 25°C)
Max
Unit
Test Conditions
60
mA —
135
mA PO = 50 mW
3.0
V
PO = 50 mW
11
°
PO = 50 mW
26
°
PO = 50 mW
—
µm PO = 5 mW, NA = 0.55
662
nm PO = 50 mW
Rev.1 Oct. 20, 2006 page 1 of 4