HL6501MG Datasheet, PDF (1/4 Pages) Opnext. Inc. – Visible High Power Laser Diode

HL6501MG
Visible High Power Laser Diode
ODE-208-040A (Z)
Rev.1
Dec. 13, 2006
Description
The HL6501MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is
suitable as a light source for large capacity optical disc memories and various other types of optical equipment.
Hermetic sealing of the small package (φ5.6 mm) assures high reliability.
Features
• High output power: 35 mW (CW)
• Visible light output: λp = 658 nm Typ
• Small package: φ 5.6 mm
• Low astigmatism: 6 µm Typ (P_O = 5 mW)
• Single longitudinal mode
Package Type
• HL6501MG: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power
PO(pulse)
LD reverse voltage
VR(LD)
PD reverse voltage
VR(PD)
Operating temperature
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width = 100 ns , duty = 50%
Ratings
35
50 *
2
30
–10 to +60
–40 to +85
(T_C = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
30
45
Operating voltage
Slope efficiency
VOP
2.1
2.6
ηs
0.5
0.75
Beam divergence
θ//
parallel to the junction
7
8.5
Beam divergence
θ⊥
18
22
perpendicular to the junction
Astigmatism
AS
—
6
Lasing wavelength
λp
645
658
Monitor current
IS
0.05
0.2
Max
70
3.0
1.0
10.5
26
—
665
1.5
Unit
mA
V
mW/mA
°
(T_C = 25°C)
Test Conditions
—
PO = 30 mW
18 (mW) / (I(24mW) – I(6mW))
PO = 30 mW
°
PO = 30 mW
µm PO = 5 mW, NA = 0.55
nm PO = 30 mW
mA
PO = 30 mW, VR(PD) = 5 V
Rev.1 Dec. 13, 2006 page 1 of 4