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HL6376DG Datasheet, PDF (1/4 Pages) Opnext. Inc. – Low Operating Current Visible Laser Diode | |||
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HL6376DG
Low Operating Current Visible Laser Diode
ODE-208-064B (Z)
Rev.2
Oct. 18, 2006
Description
This HL6376DG is 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable
as light sources for laser levelers, laser scanners and optical equipment for measurement.
Features
⢠Visible light output : 642 nm Typ
⢠Single longitudinal mode
⢠Optical output power : 60 mW CW
⢠Low operating current : 125 mA Typ
⢠Low operating voltage : 2.7 V Max
⢠Operating temperature : +50°C
⢠TE mode oscillation
Absolute Maximum Ratings
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
PO
VR(LD)
VR(PD)
Topr
Tstg
Package Type
⢠HL6376DG: DG
Internal Circuit
1
3
PD
LD
2
Ratings
65
2
30
â10 to +50
â40 to +85
(TC = 25°C)
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
â
65
Operating current
IOP
â
125
Operating voltage
VOP
â
2.5
Beam divergence
θ//
7
10
parallel to the junction
Beam divergence
θâ¥
16
21
perpendicular to the junction
Lasing wavelength
λp
635
642
Monitor current
IS
0.2
0.4
Max
80
155
2.7
13
24
645
0.8
Unit
mA
mA
V
°
(TC = 25°C)
Test Condition
â
PO = 60 mW
PO = 60 mW
PO = 60 mW
°
PO = 60 mW
nm PO = 60 mW
mA
PO = 60 mW, VR(PD) = 5 V
Rev.2 Oct. 18, 2006 page 1 of 4
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