HL6364DG Datasheet, PDF (1/4 Pages) Opnext. Inc. – Low Operating Current Visible Laser Diode

HL6364DG/65DG
Low Operating Current Visible Laser Diode
ODE-208-060B (Z)
Rev.2
Oct. 17, 2006
Description
The HL6364DG/65DG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Features
• Visible light output : 642 nm Typ
• Single longitudinal mode
• Optical output power : 60 mW CW
• Low operating current : 125 mA Typ
• Low operating voltage : 2.7 V Max
• Operating temperature : +50°C
• TE mode oscillation
Absolute Maximum Ratings
Package Type
• HL6364DG/65DG: DG
Internal Circuit
• HL6364DG
1
3
PD
LD
2
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
PO
VR(LD)
VR(PD)
Topr
Tstg
Ratings
65
2
30
–10 to +50
–40 to +85
Internal Circuit
• HL6365DG
1
3
PD
LD
2
(T_C = 25°C)
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
—
65
Operating current
IOP
—
125
Operating voltage
VOP
—
2.5
Beam divergence
θ//
7
10
parallel to the junction
Beam divergence
θ⊥
16
21
perpendicular to the junction
Lasing wavelength
λp
635
642
Monitor current
IS
0.2
0.4
Max
80
155
2.7
13
24
645
0.8
Unit
mA
mA
V
°
(T_C = 25°C)
Test Condition
—
PO = 60 mW
PO = 60 mW
PO = 60 mW
°
PO = 60 mW
nm PO = 60 mW
mA
PO = 60 mW, VR(PD) = 5 V
Rev.2 Oct. 17, 2006 page 1 of 4