HL6335G Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – Circular Beam Low Operating Current

HL6335G/36G
Circular Beam Low Operating Current
ODE-208-034 (Z)
Rev.0
Jul. 01, 2005
Description
The HL6335/36G are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products
were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source for laser
levelers, laser scanners and optical equipment for measurement.
Features
• Optical output power : 5 mW CW
• Single longitudinal mode
• Visible light power : 635 nm Typ
• Low operating current : 25 mA Typ
• Low aspect ratio
: 1.2 Typ
• Operating temperature : +50°C
• TM mode oscillation
Package Type
• HL6335/36G: G2
Internal Circuit
• HL6335G
1
3
Internal Circuit
• HL6336G
1
3
PD
LD PD
LD
2
2
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power
PO(pulse)
LD reverse voltage
VR(LD)
PD reverse voltage
VR(PD)
Operating temperature
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%
Ratings
5
6*
2
30
–10 to +50
–40 to +85
(T_C = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
(T_C = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Threshold current
Ith
—
20
30
mA —
Slope efficiency
ηs
0.5
0.8
1.1
mW/mA 3 (mW) / (I(4mW) – I(1mW))
Operating current
IOP
—
25
40
mA PO = 5 mW
Operating voltage
VOP
—
2.4
2.7
V
PO = 5 mW
Lasing wavelength
λp
630
635
640
nm PO = 5 mW
Beam divergence
θ//
parallel to the junction
13
17
25
°
PO = 5 mW
Beam divergence
θ⊥
perpendicular to the junction
16
20
25
°
PO = 5 mW
Aspect ratio
θ⊥/θ//
—
1.2
1.5
—
PO = 5 mW
Monitor current
IS
0.03
0.07
0.12
mA
PO = 5 mW, VR(PD) = 5 V
Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as
by ESD.
2. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a
board.
Rev.0 Jul. 01, 2005 page 1 of 5