HL6331G Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Low Operating Current Visible Laser Diode

HL6331G/32G
Low Operating Current Visible Laser Diode
ODE-208-032A (Z)
Rev.1
Oct. 21, 2005
Description
The HL6331G/32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They
are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Features
• Visible light output: λp = 635 nm Typ
• Single longitudinal mode
• Optical output power: 10 mW CW
• Low operating current : 55 mA Typ
• Low Operating voltage: 2.4 V Max
• Operating temperature : +60°C
• TM mode oscillation
Absolute Maximum Ratings
Package Type
• HL6331G/32G: G2
Internal Circuit
• HL6331G
1
3
PD
LD
2
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
PO
VR(LD)
VR(PD)
Topr
Tstg
Ratings
10
2
30
–10 to +60
–40 to +85
Internal Circuit
• HL6332G
1
3
PD
LD
2
(T_C = 25°C)
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
—
40
Operating current
IOP
—
55
Operating voltage
VOP
—
2.2
Slope efficiency
ηs
0.40
0.65
Beam divergence
θ//
6
8
parallel to the junction
Beam divergence
θ⊥
25
31
perpendicular to the junction
Lasing wavelength
λp
630
635
Monitor current
IS
0.08
0.15
Max
60
75
2.4
0.90
11
36
640
0.30
Unit
mA
mA
V
mW/mA
°
(T_C = 25°C)
Test Conditions
—
PO = 10 mW
PO = 10 mW
6 (mW) / (I(8mW) – I(2mW))
PO = 10 mW
°
PO = 10 mW
nm PO = 10 mW
mA
PO = 10 mW, VR(PD) = 5 V
Rev.1 Oct. 21, 2005 page 1 of 4