HL6325G Datasheet, PDF (1/4 Pages) Opnext. Inc. – AlGaInP Laser Diodes

HL6325G/26G
AlGaInP Laser Diodes
ODE-208-030 (Z)
Rev.0
Jul. 01, 2005
Description
The HL6325G/26G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Features
• Visible light output : 635 nm Typ
• Single longitudinal mode
• Optical output power : 5 mW CW
• Low operating current : 40 mA Typ
• Low operating voltage : 2.4 V Max
• Operating temperature : +60°C
• TM mode oscillation
Package Type
• HL6325G/26G: G2
Internal Circuit
• HL6325G
1
3
PD
LD
Internal Circuit
• HL6326G
1
3
PD
LD
2
2
Absolute Maximum Ratings
Item
Optical output power
Pulse optical output power
PD reverse voltage
Operating temperature
Storage temperature
Symbol
PO
PO(pulse)
VR(PD)
Topr
Tstg
Ratings
5
2
30
–10 to +60
–40 to +85
(T_C = 25°C)
Unit
mW
mW
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
—
30
Operating current
Operating voltage
Slope efficiency
IO_P
—
40
VOP
—
2.2
ηs
0.3
0.5
Beam divergence
θ//
parallel to the junction
6
8
Beam divergence
θ⊥
perpendicular to the junction
25
31
Lasing wavelength
λp
630
635
Monitor current
IS
0.05
0.10
Max
50
60
2.4
0.8
11
37
640
0.25
Unit
mA
mA
V
mW/mA
°
(T_C = 25°C)
Test Condition
—
PO = 5 mW
PO = 5 mW
3 (mW) / (I(4mW) – I(1mW))
PO = 5 mW
°
PO = 5 mW
nm PO = 5 mW
mA
PO = 5 mW, VR(PD) = 5 V
Rev.0 Jul. 01, 2005 page 1 of 4