HL6323MG Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – AlGaInP Laser Diode

HL6323MG
AlGaInP Laser Diodes
ODE-208-029 (Z)
Rev.0
Jul. 01, 2005
Description
The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is
suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors. The
HL6323MG is packaged in the small can (φ5.6 mm), enabling end products to be kept small.
Features
• High output power : 35 mW (CW)
• Visible light output : λp = 639 nm Typ
• Small package
: φ5.6 mm
• TM mode oscillation
• Single longitudinal mode
Pakage Type
• HL6323MG: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
Item
Optical output power
Pulse optical output power
LD reverse voltage
Symbol
PO
PO(pulse)
VR(LD)
Ratings
35 *¹
50 *²
2
PD reverse voltage
Operating temperature
VR(PD)
Topr
30
–10 to +50
Storage temperature
Tstg
–40 to +85
Notes: 1. This value is not the same as the specification for long term reliability, such as lifetime.
2. Pulse condition : Pulse width pw = 100 ns , duty = 20%
(T_C = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
30
45
Slope efficiency
ηs
0.4
0.6
Operating current
IOP
Operating voltage
VOP
Beam divergence parallel to θ//
the junction

95

2.3
7
8.5
Beam divergence
θ⊥
perpendicular to the junction
26
30
Lasing wavelength
λp
635
639
Monitor current
IS
0.05
0.15
Max
65
0.9
130
2.8
11
34
642
0.25
Unit
mA
mW/mA
mA
V
°
(T_C = 25°C)
Test Condition
—
18(mW) / (I(24mW) – I(6mW))
PO = 30 mW
PO = 30 mW
PO = 30 mW
°
PO = 30 mW
nm PO = 30 mW
mA
PO = 30 mW, VR(PD) = 5 V
Rev.0 Jul. 01, 2005 page 1 of 4