HL6321G Datasheet, PDF (1/4 Pages) Opnext. Inc. – AlGaInP Laser Diodes

HL6321G/22G
AlGaInP Laser Diodes
ODE-208-028A (Z)
Rev.1
Oct. 24, 2006
Description
The HL6321G/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser levelers and optical equipment for measurement.
Features
• Visible light output: 635 nm Typ
• Single longitudinal mode
• Optical output power: 15 mW CW
• Low operating current: 100 mA Max
• Low operating voltage: 2.7 V Max
• TM mode oscillation
Package Type
• HL6321G/22G: G2
Internal Circuit
• HL6321G
1
3
PD
LD
2
Internal Circuit
• HL6322G
1
3
PD
LD
2
Absolute Maximum Ratings
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
PO
VR(LD)
VR(PD)
Topr
Tstg
Ratings
15
2
30
–10 to +50
–40 to +85
(T_C = 25°C)
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
20
55
Operating current
IOP
—
85
Operating voltage
VOP
—
—
Slope efficiency
ηs
0.3
—
Beam divergence
θ//
6
8
parallel to the junction
Beam divergence
θ⊥
25
30
perpendicular to the junction
Lasing wavelength
λp
630
635
Monitor current
IS
0.1
0.2
Max
70
100
2.7
0.7
11
36
640
0.4
Unit
mA
mA
V
mW/mA
°
(T_C = 25°C)
Test Conditions
—
PO = 15 mW
PO = 15 mW
9 (mW) / (I(12mW) – I(3mW))
PO = 15 mW
°
PO = 15 mW
nm PO = 15 mW
mA
PO = 15 mW, VR(PD) = 5 V
Rev.1 Oct. 24, 2006 page 1 of 4