HL6319G Datasheet, PDF (1/4 Pages) Opnext. Inc. – AlGaInP Laser Diodes

HL6319G/20G
AlGaInP Laser Diodes
ODE-208-027 (Z)
Rev.0
Jul. 01, 2005
Description
The HL6319G/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser levelers and optical equipment for measurement.
Features
• Visible light output: 635 nm Typ
• Single longitudinal mode
• Optical output power: 10 mW CW
• Low operating current: 95 mA Max
• Low operating voltage: 2.7 V Max
• TM mode oscillation
Package Type
• HL6319G/20G: G2
Internal Circuit
• HL6319G
1
3
PD
LD
2
Internal Circuit
• HL6320G
1
3
PD
LD
2
Absolute Maximum Ratings
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
PO
VR(LD)
VR(PD)
Topr
Tstg
Ratings
10
2
30
–10 to +50
–40 to +85
(T_C = 25°C)
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
20
50
Operating current
IOP
—
70
Operating voltage
VOP
—
—
Slope efficiency
ηs
0.3
0.5
Beam divergence
θ//
parallel to the junction
5
8
Beam divergence
θ⊥
perpendicular to the junction
25
31
Astigmatism
AS
Lasing wavelength
λp
—
5
625
635
Monitor current
IS
0.05
0.17
Max
75
95
2.7
0.7
11
37
—
640
0.30
Unit
mA
mA
V
mW/mA
°
(T_C = 25°C)
Test Conditions
—
PO = 10 mW
PO = 10 mW
6 (mW) / (I(8mW) – I(2mW))
PO = 10 mW
°
PO = 10 mW
µm PO = 10 mW, NA = 0.55
nm PO = 10 mW
mA
PO = 10 mW, VR(PD) = 5 V
Rev.0 Jul. 01, 2005 page 1 of 4