HL6316G Datasheet, PDF (1/4 Pages) Opnext. Inc. – AlGaInP Laser Diodes

HL6316G
AlGaInP Laser Diodes
ODE-208-026 (Z)
Rev.0
Jul. 01, 2005
Description
The HL6316G is a 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as
light sources for laser pointers and optical equipment.
Features
• Visible light output: 635 nm Typ
• Single longitudinal mode
• Optical output power: 3 mW CW
• Low operating current: 30 mA Typ
• Low operating voltage: 2.7 V Max
• TM mode oscillation
Package Type
• HL6316G: G2
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power
LD reverse voltage
PO(pulse)
VR(LD)
PD reverse voltage
Operating temperature
VR(PD)
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%
Ratings
3
5*
2
30
–10 to +50
–40 to +85
(T_C = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
—
25
Operating current
IOP
—
30
Operating voltage
Beam divergence
VOP
—
—
θ//
6
8
parallel to the junction
Beam divergence
θ⊥
23
30
perpendicular to the junction
Lasing wavelength
λp
630
635
Monitor current
IS
0.1
0.3
Max
35
42
2.7
10
39
640
0.6
Unit
mA
mA
V
°
(T_C = 25°C)
Test Conditions
—
PO = 3 mW
PO = 3 mW
PO = 3 mW
°
PO = 3 mW
nm PO = 3 mW
mA
PO = 3 mW, VR(PD) = 5 V
Rev.0 Jul 01, 2005 page 1 of 4