HL6314MG Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – AlGaInP Laser Diode

HL6314MG/24MG
AlGaInP Laser Diodes
ODE-208-025 (Z)
Rev.0
Jul. 01, 2005
Description
The HL6314MG/24MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser pointers and optical equipment for amusement.
Features
• Visible light output: 635 nm Typ
• Single longitudinal mode
• Optical output power: 3 mW CW
• Low operating current: 30 mA Typ
• Low operating voltage: 2.7 V Max
• TM mode oscillation
Package Type
• HL6314MG/24MG: MG
Internal Circuit
• HL6314MG
1
3
PD
LD
2
Internal Circuit
• HL6324MG
1
3
PD
LD
2
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power
PO(pulse)
LD reverse voltage
VR(LD)
PD reverse voltage
VR(PD)
Operating temperature
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%
Ratings
3
5*
2
30
–10 to +50
–40 to +85
(T_C = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
—
25
Operating current
IOP
—
30
Operating voltage
VOP
—
—
Beam divergence
θ//
6
8
parallel to the junction
Beam divergence
θ⊥
23
30
perpendicular to the junction
Astigmatism
AS
—
8
Lasing wavelength
λp
630
635
Monitor current
IS
0.08
0.15
Max
35
42
2.7
10
39
—
640
0.40
Unit
mA
mA
V
°
(T_C = 25°C)
Test Conditions
—
PO = 3 mW
PO = 3 mW
PO = 3 mW
°
PO = 3 mW
µm PO = 3 mW, NA = 0.55
nm PO = 3 mW
mA
PO = 3 mW, VR(PD) = 5 V
Rev.0 Jul. 01, 2005 page 1 of 4