HL6312G Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – AlGaInP Laser Diodes

HL6312G/13G
AlGaInP Laser Diodes
ODE-208-017 (Z)
Rev.0
Jul. 01, 2005
Description
The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength
is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types
of optical equipment. Hermetic sealing of the package achieves high reliability.
Features
• Visible light output: λp = 635 nm Typ
• Single longitudinal mode
• Optical output power: 5 mW CW
• Low Operating voltage: 2.7 V Max
• Built-in photodiode for monitoring laser output
• TM mode oscillation
Package Type
• HL6312G/13G: LD/G2
Internal Circuit
• HL6312G
1
3
Internal Circuit
• HL6313G
1
3
PD
LD PD
LD
2
2
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power
PO(pulse)
LD reverse voltage
VR(LD)
PD reverse voltage
VR(PD)
Operating temperature
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%
Ratings
5
6*
2
30
–10 to +50
–40 to +85
(T_C = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
20
45
Operating current
IOP
Operating voltage
VOP
Beam divergence
θ//
parallel to the junction
—
55
—
—
5
8
Beam divergence
θ⊥
perpendicular to the junction
25
31
Astigmatism
AS
—
8
Lasing wavelength
λp
625
635
Monitor current
IS
0.2
0.4
Max
70
85
2.7
11
37
—
640
0.8
Unit
mA
mA
V
°
(T_C = 25°C)
Test Conditions
—
PO = 5 mW
PO = 5 mW
PO = 5 mW
°
PO = 5 mW
µm PO = 5 mW, NA = 0.55
nm PO = 5 mW
mA
PO = 5 mW, VR(PD) = 5 V
Rev.0 Jul. 01, 2005 page 1 of 4