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HE8812SG Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – GaAlAs Infrared Emitting Diode | |||
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HE8812SG
GaAlAs Infrared Emitting Diode
ODE-208-052 (Z)
Rev.0
Oct. 30, 2006
Description
The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as
the light source in a wide range of optical control and sensing equipment.
Features
⢠High efficiency and high output power
Package Type
⢠HE8812: SG1
Internal Circuit
1
Absolute Maximum Ratings
Item
Forward current
Reverse voltage
Operating temperature
Storage temperature
Symbol
IF
VR
Topr
Tstg
Ratings
250
3
â20 to +60
â40 to +90
2
(TC = 25°C)
Unit
mA
V
°C
°C
Optical and Electrical Characteristics
Item
Optical output power
Peak wavelength
Spectral width
Forward voltage
Reverse current
Capacitance
Rise time
Fall time
Symbol
Min
Typ
PO
40
â
λp
840
870
âλ
â
50
VF
â
â
IR
â
â
Ct
â
30
tr
â
10
tf
â
10
(TC = 25°C)
Max
Unit
Test Conditions
â
mW IF = 200 mA
900
nm IF = 200 mA
60
nm IF = 200 mA
2.5
V
IF = 200 mA
100
µA
VR = 3 V
â
pF VR = 0 V, f = 1 MHz
â
ns
IF = 50 mA
â
ns
IF = 50 mA
Rev.0 Oct. 30, 2006 page 1 of 4
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