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HE8811_06 Datasheet, PDF (1/4 Pages) Opnext. Inc. – GaAlAs Infrared Emitting Diode | |||
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HE8811
GaAlAs Infrared Emitting Diode
ODE-208-051 (Z)
Rev.0
Oct. 30, 2006
Description
The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high
output power and fast response make it suitable as a light source in measuring instruments and infrared-beam
communication equipment.
Features
⢠High-frequency response
⢠High efficiency and high output power
⢠Broad radiation pattern
Package Type
⢠HE8811: SG1
Internal Circuit
1
Absolute Maximum Ratings
Item
Forward current
Reverse voltage
Operating temperature
Storage temperature
Symbol
IF
VR
Topr
Tstg
Ratings
200
3
â20 to +60
â40 to +90
2
(TC = 25°C)
Unit
mA
V
°C
°C
Optical and Electrical Characteristics
Item
Optical output power
Peak wavelength
Spectral width
Forward voltage
Reverse current
Capacitance
Rise time
Fall time
Symbol
Min
Typ
PO
20
30
λp
780
820
âλ
â
50
VF
â
â
IR
â
â
Ct
â
10
tr
â
5
tf
â
7
(TC = 25°C)
Max
Unit
Test Conditions
â
mW IF = 150 mA
900
nm IF = 150 mA
â
nm IF = 150 mA
2.5
V
IF = 150 mA
100
µA
VR = 3 V
â
pF VR = 0 V, f = 1 MHz
â
ns
IF = 50 mA
â
ns
IF = 50 mA
Rev.0 Oct. 30, 2006 page 1 of 4
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