HE8807SG Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – GaAlAs Infrared Emitting Diodes

HE8807SG/FL
GaAlAs Infrared Emitting Diodes
ODE-208-050 (Z)
Rev.0
Oct. 30, 2006
Description
The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm.
Features
• High output, high efficiency
• Narrow spectral width
• Sharp radiation directivity (HE8807FL)
• Wide radiation directivity (HE8807SG)
• High reliability
Package Type
• HE8807SG: SG1
Package Type
• HE8807FL: FL
Internal Circuit
1
2
Absolute Maximum Ratings
Item
Forward current
Reverse voltage
Operating temperature
Storage temperature
Symbol
IF
VR
Topr
Tstg
Ratings
200
3
–20 to +85
–40 to +100
(T_C = 25°C)
Unit
mA
V
°C
°C
Optical and Electrical Characteristics
Item
Symbol Min
Typ
Max
Optical output power
HE8807SG PO
10
20
—
HE8807FL Pf *
0.5
1.0
—
Peak wavelength
λp
800
880
900
Spectral width
∆λ
—
30
60
Forward voltage
VF
—
1.7
2.3
Reverse current
Capacitance
IR
—
—
100
Ct
—
10
—
Rise time
Fall time
tr
—
20
—
tf
—
20
—
Note: Pf specification: The optical output within 9 degrees of the acceptance angle.
Unit
mW
nm
nm
V
µA
pF
ns
ns
(T_C = 25°C)
Test Conditions
IF = 150 mA
IF = 20 mA
IF = 150 mA
IF = 150 mA
IF = 150 mA
VR = 3 V
VR = 0 V, f = 1 MHz
IF = 50 mA
IF = 50 mA
Rev.0 Oct. 30, 2006 page 1 of 5