HE8404SG_06 Datasheet, PDF (1/4 Pages) Opnext. Inc. – GaAlAs Infrared Emitting Diode

HE8404SG
GaAlAs Infrared Emitting Diode
ODE-208-049 (Z)
Rev.0
Oct. 30, 2006
Description
The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as
the light source in a wide range of optical control and sensing equipment.
Features
• High efficiency and high output power
Package Type
• HE8404SG: SG1
Internal Circuit
1
Absolute Maximum Ratings
Item
Forward current
Reverse voltage
Operating temperature
Storage temperature
Symbol
IF
VR
Topr
Tstg
Ratings
250
3
–20 to +60
–40 to +90
2
(T_C = 25°C)
Unit
mA
V
°C
°C
Optical and Electrical Characteristics
Item
Optical output power
Peak wavelength
Spectral width
Forward voltage
Reverse current
Capacitance
Rise time
Fall time
Symbol
Min
Typ
PO
40
—
λp
790
820
∆λ
—
50
VF
—
—
IR
—
—
Ct
—
30
tr
—
10
tf
—
10
(T_C = 25°C)
Max
Unit
Test Conditions
—
mW IF = 200 mA
850
nm IF = 200 mA
60
nm IF = 200 mA
2.5
V
IF = 200 mA
100
µA
VR = 3 V
—
pF VR = 0 V, f = 1 MHz
—
ns
IF = 50 mA
—
ns
IF = 50 mA
Rev.0 Oct. 30, 2006 page 1 of 4