NCL30030 Datasheet, PDF (9/32 Pages) ON Semiconductor – Combination Power Factor Correction

NCL30030
Table 4. ELECTRICAL CHARACTERISTICS: (V_CC = 12 V, V_BO/HV = 120 V, V_Fault = open, V_PFB = 1.9 V, V_PControl = 4 V,
V_PCS/PZCD = 0 V, V_QFB = 3 V, V_PONOFF = 4 V, V_QCS = 0 V, V_QZCD = 0 V, C_MULT = 2 nF, C_VCC = 100 nF , C_QCT = 220 pF, C_PDRV = 1 nF,
C_QDRV = 1 nF, for typical values T_J = 25°C, for min/max values, T_J is – 40°C to 125°C, unless otherwise noted)
Characteristics
Conditions
Pin
Symbol
Min Typ Max Unit
PFC DISABLE
Voltage to Current Conversion Ratio
PFC Disable Threshold
PFC Enable Hysteresis
PONOFF Operating Mode Voltage
PFC Disable Timer
PFC Enable Filter Delay
PFC Enable Timer
PFC MULTIPLIER
V_QFB = 3 V, Low Line
V_QFB = 3 V, High Line
V_PONOFF decreasing
V_QFB = increasing
t_demag/T = 70%,
R_PONOFF = 191 kW, C_PONOFF = 1 nF
V_QFB = 1.8 V (decreasing)
V_QFB = 3 V (decreasing)
Disable Timer
PONOFF Increasing
5
I_{ratio1(QFB/PON)}
13
15
17
mA
I_{ratio2(QFB/PON)}
13
15
17
5
V_POFF
1.9
2.0
2.1
V
5
V_PONHYS
0.135 0.160 0.185
V
5
V
V_PONOFF1
V_PONOFF2
1.08
1.20
1.32
1.8
2.0
2.2
5
t_Pdisable
450
500
550
ms
5
t_{Penable(filter)}
50
100
150
ms
5
t_Penable
200
–
500
ms
Multiplier maximum BO=180V
PControl = open, BO = 180 V
3
MULT_max_180
0.85
1
1.15
V
Multiplier maximum BO = 360V
PControl = open, BO = 360 V
3
MULT_max_360 0.425
0.5
0.575
V
Multiplier output
PControl = 2.5 V, BO = 180 V
3
VmultLL
0.425
0.5
0.575
V
Multiplier output
PControl = 2.5 V, BO = 360 V
3
VmultHL
0.2125 0.25 0.2875
V
Multiplier linearity with respect to BO at
low line.
(VMULT180/180V)/(VMULT120/120V)
PControl = 2.5 V, BO = 180 V and
BO = 120 V
3
Mult_linearityLL
0.98
1
1.02
Multiplier linearity with respect to BO at
PControl = 2.5 V, BO = 360 V and BO
3
Mult_linearityHL
0.99
1
1.01
high line.
= 300 V
(VMULT360/360V)/VMULT300/300V)
PFC GATE DRIVE
Rise Time (10−90%)
Fall Time (90−10%)
Driver Resistance
Source
Sink
V_PDRV from 10% to 90% of V_CC
13
90% to 10% of V_PDRV
13
13
Current Capability
Source
Sink
High State Voltage
13
V_PDRV = 2 V
V_PDRV = 10 V
V_CC = V_CC(off) + 0.2 V, R_PDRV = 10 kW
13
V_CC = 26 V, R_PDRV = 10 kW
Low State Voltage
V_Fault = 4 V
13
PFC ZERO CURRENT DETECTION
t_PDRV(rise)
t_PDRV(fall)
R_PDRV(SRC)
R_PDRV(SNK)
I_PDRV(SRC)
I_PDRV(SNK)
V_PDRV(high1)
V_PDRV(high2)
V_PDRV(low)
–
40
80
ns
–
20
40
ns
W
−
13
−
−
7
−
mA
–
500
–
–
800
–
8
–
–
V
10
12
14
–
–
0.25
V
Zero Current Detection Threshold
Hysteresis on Voltage Threshold
Propagation Delay
Input Voltage Excursion
Upper Clamp
Negative Clamp
Minimum detectable ZCD Pulse Width
V_PCS/PZCD rising
V_PCS/PZCD falling
V_PZCD(rising) – V_{PZCD(falling)}
Measure from V_PCS/PZCD =
V_{PZCD(falling)} to PDRV rising
I_PCS/PZCD = 1 mA
I_PCS/PZCD = −2 mA
Between V_PZCD(rising) and
V_{PZCD(falling)} to PDRV
14
V_PZCD(rising)
V_{PZCD(falling)}
14
V_PZCD(HYS)
14
t_PZCD
675
750
825
mV
200
250
300
375
500
625
mV
50
100
170
ns
14
V
V_{PCS/PZCD(MAX)}
6.5
7
7.5
V_{PCS/PZCD(MIN)}
−0.9
−0.7
0
14
t_SYNC
–
70
200
ns
ZCD blanking time
QR FLYBACK GATE DRIVE
Measured DRV off to DRV on
14
T_{Pzcd_blank}
450
700
1000
ns
Rise Time (10−90%)
V_QDRV from 10 to 90%
12
t_QDRV(rise)
–
40
80
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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