NCP1230AP100 Datasheet, PDF (8/21 Pages) ON Semiconductor – Low-Standby Power High Performance PWM

NCP1230
TYPICAL PERFORMANCE CHARACTERISTICS
22.0
21.5
V_CC = V_CC(off) − 0.2 V
21.0
20.5
20.0
19.5
19.0
−50 −25 0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 11. Minimum Startup Voltage vs. Temperature
100
V_CC = 13 V
75
T_J = −40 °C
50
T_J = +25 °C
25
T_J = +125 °C
0
1 10 50 200 400 600 800 850 950
V_DRAIN, VOLTAGE (V)
Figure 12. Leakage Current vs. Temperature
18
V_CC = 13 V
16
14
12
10
8.0
−50 −25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 13. Drive Source Resistance vs. Temperature
15
14
V_CC = 13 V
13
12
11
10
9.0
8.0
7.0
6.0
5.0
−50 −25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 14. Drive Sink Resistance vs. Temperature
18
17
V_CC = 13 V
16
15
14
13
12
11
10
9.0
8.0
−50 −25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 15. RPFC vs. Temperature
1.20
V_CC = 13 V
1.15
max
1.10
1.05
typ
1.00
min
0.95
0.90
−50 −25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 16. I_Limit vs. Temperature
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