CM1236 Datasheet, PDF (8/14 Pages) ON Semiconductor – PicoGuard XS® ESD Clamp Array For High Speed Data Line Protection

CM1236
ELECTRICAL OPERATING CHARACTERISTICS ^{(SEE NOTE 1)}
SYMBOL PARAMETER
V_IN
I/O Voltage Relative to GND
I_IN
Continuous Current through signal pins
(IN to OUT) 1000 Hr
CONDITIONS
I_F
Channel Leakage Current
T_A = 25°C; V_N = 0V, V_TEST = 5V
V_ESD ESD Protection - Peak Discharge Voltage
at any channel input, in system:
Contact discharge per IEC 61000-4-2
Standard
T_A = 25°C
I_RES
Residual ESD Peak Current on RDUP
IEC 61000-4-2 8kV;
(Resistance of Device Under Protection) RDUP = 5Ω T_A = 25°C
MIN TYP MAX UNITS
-0.5
5.5
V
100
mA
±0.1 ±1.0 µA
±8
kV
3.0
A
V_CL
Channel Clamp Voltage
(Channel clamp voltage per
IEC 61000-4-5 Standard)
Positive Transients
Negative Transients
R_DYN Dynamic Resistance
Positive Transients
Negative Transients
I_PP = 1A, T_A = 25°C,
t_P = 8/20µS;
I_PP = 1A, T_A = 25ºC;
t_P = 8/20µS
Z_TDR
Differential Impedance
TDR excursion from 100Ω
characteristic impedance trans-
mission line;
TR = 200ps; Note 2 and Note 3
Zo
Differential Channels pair characteristic T_R = 200ps;
impedance
Note 2 and Note 3
+9.2
V
-1.6
V
0.6
Ω
0.5
Ω
97
107
Ω
100
Ω
∆Zo Channel-to-Channel Impedance Match (Dif- T_R = 200ps; T_A = 25ºC
ferential)
;
Note 2 and Note 3
2
%
Note 1: All parameters specified at T_A = –40°C to +85°C unless otherwise noted.
Note 2: Impedance values for deviation from continuous 100Ω uncompensated differential microstrip, with typical layout as
measured via TDR with 200ps effective incident risetime. See Figure 7.
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