NCV8716 Datasheet, PDF (7/16 Pages) ON Semiconductor – 80 mA Ultra-Low Iq, Wide Input Voltage Low Dropout Regulator

NCV8716
Table 8. ELECTRICAL CHARACTERISTICS Voltage version 3.3 V
−40°C ≤ T_J ≤ 125°C; V_IN = 4.3 V; I_OUT = 1 mA, C_IN = C_OUT = 1.0 mF, unless otherwise noted. Typical values are at T_J = +25°C. (Note 21)
Parameter
Test Conditions
Symbol Min Typ Max Unit
Operating Input Voltage
I_OUT = 80 mA
V_IN
4.3
24
V
Output Voltage Accuracy
Line Regulation
Load Regulation
Dropout voltage (Note 19)
4.3 V < V_IN < 24 V, 0 < I_OUT < 80 mA
V_OUT + 1 V ≤ V_IN ≤ 24 V, I_OUT = 1 mA
I_OUT = 0 mA to 80 mA
V_DO = V_IN – (V_OUT(NOM) – 165 mV)
I_OUT = 80 mA
V_OUT 3.234 3.3 3.366
V
Reg_LINE
4
10
mV
Reg_LOAD
10
30
mV
V_DO
560 mV
350
Maximum Output Current
Ground current
Power Supply Rejection Ratio
Output Noise Voltage
(Note 22)
I_OUT
110
mA
0 < I_OUT < 80 mA, V_IN = 24 V
I_GND
3.4
5.8
mA
V_IN = 4.3 V, V_OUT = 3.3 V f = 100 kHz PSRR
60
dB
V_PP = 200 mV modulation
I_OUT = 1 mA, C_OUT = 10 mF
V_OUT = 4.3 V, I_OUT = 80 mA
V_N
f = 200 Hz to 100 kHz
200
mV_rms
Thermal Shutdown Temperature (Note 20) Temperature increasing from T_J = +25°C
T_SD
155
°C
Thermal Shutdown Hysteresis (Note 20)
Temperature falling from T_SD
T_SDH
−
25
−
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
19. Characterized when V_OUT falls 165 mV below the regulated voltage and only for devices with V_OUT = 3.3 V
20. Guaranteed by design and characterization.
21. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at T_J = T_A =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
22. Respect SOA
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