NCP716_16 Datasheet, PDF (7/18 Pages) ON Semiconductor – 80 mA Ultra-Low Iq, Wide Input Voltage Low Dropout Regulator

NCP716
Table 8. ELECTRICAL CHARACTERISTICS Voltage version 3.0 V
−40°C ≤ T_J ≤ 125°C; V_IN = 4.0 V; I_OUT = 1 mA, C_IN = C_OUT = 1.0 mF, unless otherwise noted. Typical values are at T_J = +25°C. (Note 21)
Parameter
Test Conditions
Symbol Min Typ Max Unit
Operating Input Voltage
Output Voltage Accuracy
Turn−On Time
Undervoltage Lock−Out
Line Regulation
Load Regulation
Dropout voltage (Note 19)
Maximum Output Current
Ground current
Power Supply Rejection Ratio
Output Noise Voltage
0 < I_OUT < 80 mA
V_IN
4.0
24
V
4.3 V < V_IN < 24 V, 0 < I_OUT < 80 mA
V_OUT
2.94
3.0
3.06
V
I_OUT = 1 mA
t_ON
−
700
−
ms
V_IN rising
UVLO
−
2.1
−
V
V_OUT + 1 V ≤ V_IN ≤ 24 V, I_OUT = 1 mA
Reg_LINE
4
10
mV
I_OUT = 0 mA to 80 mA
Reg_LOAD
10
30
mV
V_DO = V_IN – (V_OUT(NOM) – 90 mV)
I_OUT = 80 mA
V_DO
580 mV
370
(Note 22)
I_OUT
110
mA
0 < I_OUT < 80 mA, −40 < T_A < 85°C
I_GND
3.2
4.2
mA
0 < I_OUT < 80 mA, V_IN = 24 V
5.8
mA
V_IN = 4.3 V, V_OUT = 3.3 V f = 100 kHz PSRR
58
dB
V_PP = 200 mV modulation
I_OUT = 1 mA, C_OUT = 10 mF
V_OUT = 4.3 V, I_OUT = 80 mA
V_N
f = 200 Hz to 100 kHz
190
mV_rms
Thermal Shutdown Temperature (Note 20) Temperature increasing from T_J = +25°C
T_SD
155
°C
Thermal Shutdown Hysteresis (Note 20)
Temperature falling from T_SD
T_SDH
−
25
−
°C
19. Characterized when V_OUT falls 90 mV below the regulated voltage and only for devices with V_OUT = 3.0 V
20. Guaranteed by design and characterization.
21. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at T_J = T_A =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
22. Respect SOA
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