BC846BDW1 Datasheet, PDF (7/11 Pages) ON Semiconductor – Dual General Purpose Transistors

BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC848CDW1
1000
900
150°C
V_CE = 5 V
800
700
600
25°C
500
400
−55°C
300
200
100
0
0.0001
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 23. DC Current Gain at V_CE = 5 V
1000
900
150°C
V_CE = 10 V
800
700
600
25°C
500
400
−55°C
300
200
100
0
0.0001
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 24. DC Current Gain at V_CE = 10 V
0.20
0.18
0.16
I_C/I_B = 10
0.30
0.25
I_C/I_B = 20
0.14
0.20
0.12
0.10
150°C
0.15
0.08
25°C
0.06
0.10
25°C
150°C
0.04
0.02
−55°C
0.05
−55°C
0.00
0.00
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 25. V_CE at I_C/I_B = 10
I_C, COLLECTOR CURRENT (A)
Figure 26. V_CE at I_C/I_B = 20
1.1
I_C/I_B = 10
1.0
0.9
0.8
−55°C
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
I_C, COLLECTOR CURRENT (A)
Figure 27. V_BE(sat) at I_C/I_B = 10
1.2
I_C/I_B = 20
1.0
0.8
−55°C
25°C
0.6
0.4
150°C
0.2
0.0
0.1
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 28. V_BE(sat) at I_C/I_B = 20
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