STK5C4U332J-E Datasheet, PDF (6/14 Pages) ON Semiconductor – Intelligent Power Module (IPM)

STK5C4U332J-E
ELECTRICAL CHARACTERISTICS at Tc = 25C (Note 7)
Parameter
Test Conditions
Symbol Min
Typ
Max Unit
Power output section
Collector-emitter leakage current
VCE = 600 V
ICE
100
μA
Bootstrap diode reverse current
VR(BD) = 600 V
IR(BD)
100
μA
Collector to emitter saturation voltage
Ic = 3 A, Tj = 25C
Ic = 1.5 A, Tj = 100C
VCE(SAT)
1.6
2.4
V
1.3
-
V
Diode forward voltage
IF = 3 A, Tj = 25C
VF
IF = 1.5 A, Tj = 100C
1.5
2.3
V
1.3
-
V
Junction to case thermal resistance
Reverse conducting IGBT
θj-c(T)
-
-
11
C/W
Switching time
Turn-on switching loss
Turn-off switching loss
Ic = 3 A, VCC = 300 V, Tj = 25C
Ic = 1.5 A, VCC = 300 V, Tj = 25C
t_ON
t_OFF
E_ON
E_OFF
-
0.5
1.2
μs
-
0.6
1.4
μs
-
100
-
μJ
-
15
-
μJ
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Diode reverse recovery energy
Diode reverse recovery time
Reverse bias safe operating area
Short circuit safe operating area
E_TOT
-
115
-
μJ
E_ON
-
120
-
μJ
Ic = 1.5 A, VCC = 300 V, Tj = 100C
E_OFF
-
20
-
μJ
E_TOT
-
140
-
μJ
Ic = 1.5 A, VCC = 300 V, Tj = 100C
(di/dt set by internal driver)
E_REC
trr
-
35
-
μJ
-
150
-
ns
Ic = 6 A, VCE = 450 V
RBSOA
Full
Square
-
VCE = 400 V
SCSOA
3
-
-
μs
Allowable offset voltage slew rate
U to UN, V to VN, W to WN
dv/dt
50
-
50
V/ns
Driver Section
Gate driver consumption current
VBS = 15 V (Note 4), per driver
ID
VDD = 15 V, total
ID
-
0.1
0.2
mA
-
1.3
2.6
mA
High level Input voltage
Low level Input voltage
HINU, HINV, HINW, LINU, LINV, LINW
to GND
Vin H
Vin L
2.5
-
-
V
-
-
0.8
V
Logic 1 input current
Logic 0 input current
Bootstrap ON Resistance
VIN = +3.3 V
VIN = 0 V
IB = 1 mA
I_IN+
-
100
143
μA
I_IN-
-
-
2
μA
RB
-
110
300
Ω
FAULT terminal sink current
FAULT : ON / VFAULT = 0.1 V
IoSD
-
2
-
mA
FAULT clearance delay time
FLTCLR
1
2
3
ms
ENABLE ON/OFF voltage
VEN ON-state voltage
VEN OFF-state voltage
VEN +
2.5
-
-
V
VEN 
-
-
0.8
V
ITRIP threshold voltage
ITRIP to GND
VITRIP
0.44
0.49
0.54
V
ITRIP to shutdown propagation delay
t_ITRIP
-
550
-
ns
ITRIP blanking time
t_ITRIPBL
100
350
-
ns
VDD and VBS supply undervoltage
positive going input threshold
V_DDUV+
V_BSUV+
10.5 11.1
11.7
V
VDD and VBS supply undervoltage
negative going input threshold
V_DDUV-
V_BSUV-
10.3 10.9
11.5
V
VDD and VBS supply undervoltage I_lockout
hysteresis
V_DDUVH
V_BSUVH
0.14
0.2
-
V
7. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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