NTTFS4930N Datasheet, PDF (6/7 Pages) ON Semiconductor – Power MOSFET 30 V, 23 A, Single N−Channel, 8FL Notebook Battery Management

NTTFS4930N
TYPICAL CHARACTERISTICS
1000
100
0 V < V_GS < 20 V
Single Pulse
T_C = 25°C
10
1
10 ms
100 ms
1 ms
10 ms
0.1 _{RDS(on) Limit}
Thermal Limit
Package Limit
0.01
0.1
1
dc
10
100
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
9
I_D = 12 A
8
7
6
5
4
3
2
1
0
25
50
75
100
125
150
T_J, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
100
D = 0.5
0.2
10
0.1
0.05
0.02
1
0.01
SINGLE PULSE
0.1
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, TIME (s)
Figure 13. Thermal Response
10
100
1000
http://onsemi.com
6