NDDL01N60Z Datasheet, PDF (6/9 Pages) ON Semiconductor – N-Channel Power MOSFET

NDDL01N60Z, NDTL01N60Z
TYPICAL CHARACTERISTICS
10
V_GS ≤ 30 V
Single Pulse
T_C = 25°C
1
10 ms
10
V_GS ≤ 30 V
Single Pulse
T_C = 25°C
1
10 ms
100 ms
1 ms
100 ms
10 ms
0.1
1 ms
0.1
10 ms
dc
dc
0.01
0.001
0.1
1
R_DS(on) Limit
Thermal Limit
0.01
Package Limit
0.001
10
100
1000
0.1
1
R_DS(on) Limit
Thermal Limit
Package Limit
10
100
1000
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area for NDDL01N60Z
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 14. Maximum Rated Forward Biased
Safe Operating Area for NDTL01N60Z
10
Duty Cycle = 0.5
0.20
1 _0.10
0.05
0.02
0.1
0.01
Single Pulse
R_qJC steady state = 4.8°C/W
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
t, TIME (s)
1E+00
1E+01
Figure 15. Thermal Impedance (Junction−to−Case) for NDDL01N60Z
1E+02 1E+03
100
Duty Cycle = 0.5
0.20
10 _0.10
0.05
0.02
1
0.01
R_qJA steady state = 62°C/W
0.1
Single Pulse
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
t, TIME (s)
1E+00
1E+01
Figure 16. Thermal Impedance (Junction−to−Ambient) for NDTL01N60Z
1E+02 1E+03
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