NCV8405 Datasheet, PDF (6/10 Pages) ON Semiconductor – Self-Protected Low Side Driver with Temperature and Current Limit

NCV8405
TYPICAL PERFORMANCE CURVES
1.2
I_D = 150 mA
1.1
V_GS = V_DS
1
0.9
0.8
0.7
0.6
−40 −20 0 20 40 60 80 100 120 140
T (°C)
Figure 14. Normalized Threshold Voltage vs.
Temperature
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
1
−40°C
25°C
100°C
150°C
V_GS = 0 V
2 3 4 5 6 7 8 9 10
I_S (A)
Figure 15. Body−Diode Forward
Characteristics
200
150
t_r
100
I_D = 2.5 A
V_DD = 12 V
R_G = 0 W
1.500
1.000
I_D = 2.5 A
V_DD = 12 V
R_G = 0 W
−dV_DS/d_t(on)
t_d(off)
50
t_f
t_d(on)
0
3
4
5
6
7
8
9
10
V_GS (V)
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
0.500
dV_DS/d_t(off)
0.000
3
4
5
6
7
8
9
10
V_GS (V)
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage
125
I_D = 2.5 A
V_DD = 12 V
100
75
t_d(off), (V_GS = 10 V)
t_f, (V_GS = 5 V)
50
t_r, (V_GS = 5 V)
t_f, (V_GS = 10 V)
t_d(off), (V_GS = 5 V)
25 _{td(on), (VGS = 10 V) tr, (VGS = 10 V)} t_d(on), (V_GS = 5 V)
0
0 200 400 600 800 1000 1200 1400 1600 1800 2000
R_G (W)
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
1.5
1.3
−dV_DS/d_t(on), V_GS = 10 V
1.1
0.9
0.7
0.5 _{dVDS/dt(off), VGS = 5 V dVDS/dt(off), VGS = 10 V}
0.3
−dV_DS/d_t(on), V_GS = 5 V
0.1
−0.1
0
I_D = 2.5 A
V_DD = 12 V
500
1000
1500
200
R_G (W)
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
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