MTW7N80E Datasheet, PDF (6/8 Pages) Motorola, Inc – TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM

MTW7N80E
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous I_D can safely be
assumed to equal the values indicated.
SAFE OPERATING AREA
100
V_GS = 20 V
SINGLE PULSE
10 ^{TC = 25°C}
10 µs
100 µs
1.0
1 ms
10 ms
dc
0.1
R_DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1.0
10
100
1000
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
700
600
I_D = 7 A
500
400
300
200
100
0
25
50
75
100
125
150
T_J, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1.0
D = 0.5
0.2
0.1
0.1
0.01
1.0E−05
0.05
0.02
0.01
SINGLE PULSE
1.0E−04
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
R_θJC(t) = r(t) R_θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) − T_C = P_(pk) R_θJC(t)
1.0E−03
1.0E−02
t, TIME (s)
1.0E−01
Figure 13. Thermal Response
1.0E+00
1.0E+01
I_S
t_p
di/dt
t_rr
t_a
t_b
0.25 I_S
I_S
TIME
Figure 14. Diode Reverse Recovery Waveform
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