MTB40N10E Datasheet, PDF (6/10 Pages) Motorola, Inc – TMOS POWER FET 40 AMPERES 100 VOLTS

MTB40N10E
SAFE OPERATING AREA
1000
V_GS = 20 V
SINGLE PULSE
T_C = 25°C
100
100 ms
R_DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
1.0 ms
10
10 ms
1.0
0.1
1.0
dc
10
100
1000
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
1.0
D = 0.5
800
700
I_D = 40 A
600
500
400
300
200
100
0
25
50
75
100
125
150
T_J, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.2
0.1
0.1 _0.05
0.02
0.0
SINGLE PULSE
0.01
1.0E−05
1.0E−04
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
R_θJC(t) = r(t) R_θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) − T_C = P_(pk) R_θJC(t)
1.0E−03
1.0E−02
t, TIME (seconds)
Figure 13. Thermal Response
1.0E−01
1.0E+00
1.0E+01
I_S
t_p
di/dt
t_rr
t_a
t_b
0.25 I_S
I_S
TIME
Figure 14. Diode Reverse Recovery Waveform
3
R_θJA = 50°C/W
Board material = 0.065 mil FR−4
2.5
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
2.0
1.5
1
0.5
0
25
50
75
100
125
150
T_A, AMBIENT TEMPERATURE (°C)
Figure 15. D²PAK Power Derating Curve
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