BC556B Datasheet, PDF (6/8 Pages) ON Semiconductor – Amplifier Transistors

BC556B, BC557, A, B, C, BC558B, C
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1 ^0.05
0.1
0.07
0.05
0.03
0.02
0.01
0.1 0.2
0.5
SINGLE PULSE
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1.0 2.0
5.0 10
20
50 100 200
t, TIME (ms)
Figure 13. Thermal Response
Zq_JC(t) = (t) Rq_JC
Rq_JC = 83.35C/W MAX
Zq_JA(t) = r(t) Rq_JA
Rq_JA = 2005C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) – T_C = P_(pk) Rq_JC(t)
500 1.0Ăk 2.0Ăk
5.0Ăk 10Ă
-200
1s
3 ms
-100
-50
TA = 25°C TJ = 25°C
BC558
-10
BC557
BC556
-5.0
-2.0
-1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0 -10
-30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region – Safe Operating Area
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power than can
be handled to values less than the limitations imposed by second
breakdown.
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