NVTFS4C08N Datasheet, PDF (5/6 Pages) ON Semiconductor – Single N- Channel Power MOSFET

NVTFS4C08N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
10 ^20%
10%
5%
1 ^2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 12. Thermal Response
10
100
1000
80
70
60
50
40
30
20
10
0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
I_D (A)
Figure 13. G_FS vs. I_D
100
T_J(initial) = 25°C
10
T_J(initial) = 125°C
1
1.0E−06
1.0E−05
1.0E−04
1.E−03
T_AV, TIME IN AVALANCHE (s)
Figure 14. Avalanche Characteristics
ORDERING INFORMATION
Device
Package
Shipping^†
NVTFS4C08NTAG
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS4C08NWFTAG
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS4C08NTWG
WDFN8
(Pb−Free)
5000 / Tape & Reel
NVTFS4C08NWFTWG
WDFN8
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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