NVMFS6B05NL Datasheet, PDF (5/6 Pages) ON Semiconductor – Single N−Channel Power MOSFET

NVMFS6B05NL
TYPICAL CHARACTERISTICS
80
100
70
60
50
40
10
25°C
30
20
100°C
10
0
1
0 10 20 30 40 50 60 70 80 90 100
0.0001
0.001
0.01
I_D, DRAIN CURRENT (A)
Figure 12. G_FS vs. I_D
T_AV, TIME IN AVALANCHE (sec)
Figure 13. I_PEAK vs. T_AV
100
50% Duty Cycle
10 ^20%
10%
5%
1 ^2%
1%
0.1
0.01 ^{Single Pulse}
0.001
0.000001 0.00001
0.0001
NVMFS6B05NL, 650 mm², 2 oz, Cu Single Layer Pad
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 14. Thermal Response
10
100
1000
DEVICE ORDERING INFORMATION
Device
NVMFS6B05NLT1G
Marking
6B05L
Package
DFN5
(Pb−Free)
Shipping^†
1500 / Tape & Reel
NVMFS6B05NLWFT1G
605LWF
DFN5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
NVMFS6B05NLT3G
6B05L
DFN5
(Pb−Free)
5000 / Tape & Reel
NVMFS6B05NLWFT3G
605LWF
DFN5
(Pb−Free, Wettable Flanks)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
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