NUD3160 Datasheet, PDF (5/9 Pages) ON Semiconductor – Industrial Inductive Load Driver

NUD3160
TYPICAL PERFORMANCE CURVES
(T_J = 25°C unless otherwise specified)
80
V_DS = 60 V
70
60
50
40
30
20
10
0
−50 −25
0
25
50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
Figure 4. Drain−to−Source Leakage vs.
Junction Temperature
80
70
60
V_GS = 5 V
50
40
V_GS = 3 V
30
20
−50
−25
0
25
50
75 100 125
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. Gate−to−Source Leakage vs.
Junction Temperature
66.4
66.2
66.0
65.8
65.6
65.4
65.2
65.0
64.8
−50
I_D = 10 mA
−25
0
25
50
75 100
T_J, JUNCTION TEMPERATURE (°C)
Figure 6. Breakdown Voltage vs.
Junction Temperature
1E+03
1E+02
V_GS = 5 V
1E+01
V_GS = 3 V
V_GS = 2.5 V
V_GS = 2 V
1E+00
1E−01
1E−02
V_GS = 1.5 V
1E−03
125
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Output Characteristics
1
V_DS = 0.8 V
0.1
0.01
0.001
125 °C
1E−04
1E−05
85 °C
1E−06
25 °C −40 °C
3200
I_D = 0.15 A
2800
2400
2000
V_GS = 3.0 V
1600
1200
V_GS = 5.0 V
1E−07
800
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
−50 −25
0
25
50 75 100 125
V_GS, GATE−TO−SOURCE VOLTAGE (V)
T_J, JUNCTION TEMPERATURE (°C)
Figure 8. Transfer Function
Figure 9. On Resistance Variation vs
Junction Temperature
http://onsemi.com
5