NTTFS4945N Datasheet, PDF (5/7 Pages) ON Semiconductor – Power MOSFET 30 V, 34 A, Single N−Channel, μ8FL

NTTFS4945N
TYPICAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
0
C_iss
C_oss
V_GS = 0 V
T_J = 25°C
C_rss
5
10
15
20
25
30
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
V_DD = 15 V
I_D = 15 A
V_GS = 10 V
100
10
t_d(off)
t_f
t_r
t_d(on)
1
1
10
100
R_G, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10
1
V_GS = 20 V
Single Pulse
T_C = 25°C
0.1 _{RDS(on) Limit}
Thermal Limit
Package Limit
0.01
0.01
0.1
1
10 ms
100 ms
1 ms
10 ms
dc
10
100
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
12
11 T_J = 25°C
10
Q_T
9
8
7
6
5
4
3
Q_gs
Q_gd
2
1
0
0
5
QT
10
V_DD = 15 V
V_GS = 10 V
I_D = 20 A
15
20
Q_g, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
V_GS = 0 V
25
20
T_J = 125°C
15
10
5
T_J = 25°C
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V_SD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
30
I_D = 23 A
25
20
15
10
5
0
25
50
75
100
125
150
T_J, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5