NTMFS4C025N Datasheet, PDF (5/7 Pages) ON Semiconductor – Power MOSFET

NTMFS4C025N
TYPICAL CHARACTERISTICS
10
Q_T
8
6
4 ^QGS
Q_GD
V_GS = 10 V
2
V_DD = 15 V
I_D = 30 A
T_J = 25°C
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Q_G, TOTAL GATE CHARGE (nC)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18 V_GS = 0 V
16
14
12
T_J = 125°C
10
T_J = 25°C
8
6
4
2
0
0.4 0.5
0.6
0.7
0.8
0.9 1.0
V_SD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1000
100
V_GS = 10 V
V_DD = 15 V
I_D = 15 A
10
t_d(off)
t_f
t_r
t_d(on)
1
1
10
100
R_G, GATE RESISTANCE (W)
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
1000
0 V < V_GS < 10 V
100
10 ms
100 ms
10
1 ms
10 ms
1
0.1
0.01
0.01
R_DS(on) Limit
Thermal Limit
Package Limit
0.1
1
dc
10
100
R_G, GATE RESISTANCE (W)
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
36
32
I_D = 27 A
28
24
20
16
12
8
4
0
25
50
75
100
125
150
T_J, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5 10 15 20 25 30 35 40 45 50 55 60
I_D (A)
Figure 12. G_FS vs. I_D
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