NSS40301MZ4_10 Datasheet, PDF (5/6 Pages) ON Semiconductor – Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) NPN Transistor

NSS40301MZ4
TYPICAL CHARACTERISTICS
1.4
1.2 ^{IC/IB = 10}
1.0
−55°C
0.8
0.6
25°C
0.4
150°C
0.2
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Saturation Voltage
1.4
1.2 ^{IC/IB = 50}
1.0
−55°C
0.8
0.6
25°C
0.4
0.2
150°C
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 9. Base−Emitter Saturation Voltage
450
400
350
300
250
200
150
100
50
0
0
T_J = 25°C
f_test = 1 MHz
1
2
3
4
5
6
7
8
V_EB, EMITTER BASE VOLTAGE (V)
Figure 10. Input Capacitance
100
T_J = 25°C
f_test = 1 MHz
80
60
40
20
0
0 10 20 30 40 50 60 70 80 90
V_CB, COLLECTOR BASE VOLTAGE (V)
Figure 11. Output Capacitance
240
10
T_J = 25°C
200 ^ftest ^{= 1 MHz}
V_CE = 10 V
160
1
120
80
0.1
40
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 12. Current−Gain Bandwidth Product
0.01
1
0.5 ms
1 ms
10 ms
100 ms
10
100
V_CE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
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