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MR750 Datasheet, PDF (5/7 Pages) Motorola, Inc – HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION
MR750 SERIES
100
70
50
TJ = 175°C
CURRENT INPUT WAVEFORM
30
TJ = 25°C
20
1.0
1000
700
500
300
200
100
70
50
30
20
10
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
REPETITION FREQUENCY (kHz)
Figure 9. Rectification Efficiency
TJ = 25°C
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Junction Capacitance
30
20
TJ = 25°C
10
7.0
IF = 5 A
5.0
3A
1A
3.0
2.0
0
IR
1.0
0.1 0.2
IF
trr
0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IR/IF, RATIO OF REVERSE TO FORWARD CURRENT
Figure 10. Reverse Recovery Time
1.0
uf
0.7
tfr
ufr
0.5
0.3
TJ = 25°C
ufr = 1.0 V
0.2
ufr = 2.0 V
0.1
1.0
2.0
3.0
5.0
7.0
10
IF, FORWARD PULSE CURRENT (AMP)
Figure 12. Forward Recovery Time
RS
RL
VO
Figure 13. Single−Phase Half−Wave
Rectifier Circuit
The rectification efficiency factor σ shown in Figure 9
was calculated using the formula:
σ
+
P(dc)
P(rms)
+
V2o(dc)
RL
V2o(rms)
.100% +
V2o(dc)
V2o(ac) ) V2o(dc)
(1)
.100%
RL
For a sine wave input Vm sin (wt) to the diode, assumed
lossless, the maximum theoretical efficiency factor becomes:
V2m
σ(sine)
+
p2RL
V2m
.100%
+
4
π2
.100%
+
40.6%
(2)
4RL
For a square wave input of amplitude Vm, the efficiency
factor becomes:
V2m
σ(square)
+
2RL
V2m
.100%
+
50%
(3)
RL
(A full wave circuit has twice these efficiencies)
As the frequency of the input signal is increased, the
reverse recovery time of the diode (Figure 10) becomes
significant, resulting in an increasing AC voltage
component across RL which is opposite in polarity to the
forward current, thereby reducing the value of the efficiency
factor σ, as shown on Figure 9.
It should be emphasized that Figure 9 shows waveform
efficiency only; it does not provide a measure of diode
losses. Data was obtained by measuring the AC component
of Vo with a true rms AC voltmeter and the DC component
with a DC voltmeter. The data was used in Equation 1 to
obtain points for Figure 9.
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